2SB1091
器件描述:Silicon PNP Triple Diffused
文件大小:35.43KB,共6页
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器件资料摘要:
2SB1091
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
3.5 kΩ
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–60 V
Collector to emitter voltage V
CEO
–60 V
Emitter to base voltage V
EBO
–7 V
Collector current I
C
–8 A
Collector peak current I
C(peak)
–12 A
Collector power dissipation P
C
*
1
40 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.