Power Transistors
1
Publication date: March 2003 SJD00031AED
2SB0952 (2SB952), 2SB0952A (2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage
2SB0952 V
CBO
−40 V
(Emitter open)
2SB0952A −50
Collector-emitter voltage
2SB0952 V
CEO
−20 V
(Base open)
2SB0952A −40
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−7A
Peak collector current I
CP
−12 A
Collector power dissipation P
C
30 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0952 V
CEO
I
C
= −10 mA, I
B
= 0 −20 V
(Base open)
2SB0952A −40
Collector-base cutoff
2SB0952 I
CBO
V
CB
= −40 V, I
E
= 0 −50 µA
current (Emitter open)
2SB0952A V
CB
= −50 V, I
E
= 0 −50
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −50 µA
Forward current transfer ratio h
FE1
V
CE
= −2 V, I
C
= − 0.1 A 45 
h
FE2
*
V
CE
= −2 V, I
C
= −2 A 60 260
Collector-emitter saturation voltage V
CE(sat)
I
C
= −5 A, I
B
= − 0.16 A − 0.6 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −5 A, I
B
= − 0.16 A −1.5 V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 10 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 140 MHz
(Common base, input open circuited)
Turn-on time t
on I
C
= −2 A
0.1 µs
Storage time t
stg
I
B1
= −66 mA, I
B2
= 66 mA 0.5 µs
Fall time t
f
V
CC
= −20 V
0.1 µs
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
N-G1 Package
8.5±0.2 3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0) 1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Note) Self-supported type package is also prepared.
Note) The part numbers in the parenthesis show conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R Q P
h
FE2
60 to 120 90 to 180 130 to 260