Power Transistors
1
Publication date: April 2003 SJD00030BED
2SB0951 (2SB951), 2SB0951A (2SB951A)
Silicon PNP epitaxial planar type darlington
For midium-speed switching
Complementary to 2SD1277 and 2SD1277A
■ Features
• High forward current transfer ratio h
FE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage
2SB0951 V
CBO
−60 V
(Emitter open)
2SB0951A −80
Collector-emitter voltage
2SB0951 V
CEO
−60 V
(Base open)
2SB0951A −80
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−8A
Peak collector current I
CP
−12 A
Collector power P
C
45 W
dissipation T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0951 V
CEO
I
C
= −30 mA, I
B
= 0 −60 V
(Base open)
2SB0951A −80
Collector-base cutoff
2SB0951 I
CBO
V
CB
= −60 V, I
E
= 0 −100 µA
current (Emitter open)
2SB0951A V
CB
= −80 V, I
E
= 0 −100
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −7 V, I
C
= 0 −2mA
Forward current transfer ratio h
FE1
*
V
CE
= −3 V, I
C
= −4 A 1 000 10 000 
h
FE2
V
CE
= −3 V, I
C
= −8 A 500
Collector-emitter saturation voltage V
CE(sat)
I
C
= −4 A, I
B
= −8 mA −1.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −4 A, I
B
= −8 mA −2.0 V
Transition frequency f
T
V
CE
= −10 V, I
C
= −1 A, f = 1 MHz 20 MHz
Turn-on time t
on
I
C
= −4 A, I
B1
= −8 mA, I
B2
= 8 mA 0.5 µs
Storage time t
stg
V
CC
= −50 V 2.0 µs
Fall time t
f
1.0 µs
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R Q P
h
FE1
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E