Power Transistors
1
Publication date: April 2003 SJD00028BED
2SB0949 (2SB949), 2SB0949A (2SB949A)
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
■ Features
• High forward current transfer ratio h
FE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage
2SB0949 V
CBO
−60 V
(Emitter open)
2SB0949A −80
Collector-emitter voltage
2SB0949 V
CEO
−60 V
(Base open)
2SB0949A −80
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−2A
Peak collector current I
CP
−4A
Collector power T
C
= 25°CP
C
35 W
dissipation 2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0949 V
CEO
I
C
= −30 mA, I
B
= 0 −60 V
(Base open)
2SB0949A −80
Base-emitter voltage V
BE
V
CE
= −4 V, I
C
= −2 A −2.8 V
Collector-base cutoff
2SB0949 I
CBO
V
CB
= −60 V, I
E
= 0 −1mA
current (Emitter open)
2SB0949A V
CB
= −80 V, I
E
= 0 −1
Collector-emitter cutoff
2SB0949 I
CEO
V
CE
= −30 V, I
B
= 0 −2mA
current (Base open)
2SB0949A V
CE
= −40 V, I
B
= 0 −2
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −2mA
Forward current transfer ratio h
FE1
V
CE
= −4 V, I
C
= −1 A 1 000 
h
FE2
*
V
CE
= −4 V, I
C
= −2 A 1 000 10 000
Collector-emitter saturation voltage V
CE(sat)
I
C
= −2 A, I
B
= −8 mA −2.5 V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on
I
C
= −2 A, I
B1
= −8 mA, I
B2
= 8 mA 0.4 µs
Storage time t
stg
V
CC
= −50 V 1.5 µs
Fall time t
f
0.5 µs
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R Q P
h
FE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E