2SB0792A
器件描述：For High Breakdown Voltage Low-noise Amplification
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：71.03KB，共3页
Sponsor by e络盟器件资料摘要：
Transistors
1
Publication date: March 2003 SJC00058BED
2SB0792 (2SB792), 2SB0792A (2SB792A)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol:
• 2SB0792: I
• 2SB0792A: 2F
Rank R S T
h
FE
130 to 220 185 to 330 260 to 450
Marking
2SB0792 IR IS IT
symbol
2SB0792A 2FR 2FS
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Parameter Symbol Rating Unit
Collector-base voltage
2SB0792 V
CBO
−150 V
(Emitter open)
2SB0792A −185
Collector-emitter voltage
2SB0792 V
CEO
−150 V
(Base open)
2SB0792A −185
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−50 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0792 V
CEO
I
C
= −100 µA, I
B
= 0 −150 V
(Base open)
2SB0792A −185
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −100 V, I
E
= 0 −1 µA
Forward current transfer
2SB0792 h
FE
V
CE
= −5 V, I
C
= −10 mA 130 450
ratio
*
2SB0792A 130 330
Collector-emitter saturation voltage V
CE(sat)
I
C
= −30 mA, I
B
= −3 mA −1V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 4 pF
(Common base, input open circuited)
Noise voltage NV V
CE
= −10 V, I
C
= −1 mA, G
V
= 80 dB 150 mV
R
g
= 100 kΩ, Function = FLAT
Note) The part numbers in the parenthesis show conventional part number.
1
Publication date: March 2003 SJC00058BED
2SB0792 (2SB792), 2SB0792A (2SB792A)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol:
• 2SB0792: I
• 2SB0792A: 2F
Rank R S T
h
FE
130 to 220 185 to 330 260 to 450
Marking
2SB0792 IR IS IT
symbol
2SB0792A 2FR 2FS
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Parameter Symbol Rating Unit
Collector-base voltage
2SB0792 V
CBO
−150 V
(Emitter open)
2SB0792A −185
Collector-emitter voltage
2SB0792 V
CEO
−150 V
(Base open)
2SB0792A −185
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−50 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0792 V
CEO
I
C
= −100 µA, I
B
= 0 −150 V
(Base open)
2SB0792A −185
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −100 V, I
E
= 0 −1 µA
Forward current transfer
2SB0792 h
FE
V
CE
= −5 V, I
C
= −10 mA 130 450
ratio
*
2SB0792A 130 330
Collector-emitter saturation voltage V
CE(sat)
I
C
= −30 mA, I
B
= −3 mA −1V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 4 pF
(Common base, input open circuited)
Noise voltage NV V
CE
= −10 V, I
C
= −1 mA, G
V
= 80 dB 150 mV
R
g
= 100 kΩ, Function = FLAT
Note) The part numbers in the parenthesis show conventional part number.