Transistors
1
Publication date: January 2003 SJC00055BED
2SB0788 (2SB788)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD0958 (2SD958)
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−120 V
Collector-emitter voltage (Base open) V
CEO
−120 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−20 mA
Peak collector current I
CP
−50 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) The part number in the parenthesis shows conventional part number.
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −120 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −120 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −50 V, I
E
= 0 −100 nA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −50 V, I
B
= 0 −1 µA
Forward current transfer ratio
*
h
FE
V
CE
= −2 V, I
C
= −2 A 180 520 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −20 mA, I
B
= −2 mA − 0.6 V
Noise voltage NV V
CE
= −40 V, I
C
= −1 mA, G
V
= 80 dB 150 mV
R
g
= 100 kΩ, Function = FLAT
Rank Q R
h
FE
180 to 360 260 to 520
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.0)
(1.5)
(0.85) 0.45±0.05
0.55±0.1
(2.5)(2.5)
213
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)