1
Transistor
2SC1980
Silicon NPN epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SA921
n
Features
l High collector to emitter voltage V
CEO
.
l Low noise voltage NV.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
120
7
50
20
250
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
*
h
FE
Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 50
V
, I
E
= 0
V
CE
= 50V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 5V, I
E
= –2mA, f = 200MHz
V
CE
= 40V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
min
120
120
7
180
typ
200
max
0.1
1
700
0.6
150
Unit
m A
m A
V
V
V
V
MHz
mV