1
Transistor
2SA879
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1573
n
Features
l High collector to emitter voltage V
CEO
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9– 0.2
2.54– 0.15
0.7– 0.1
4.9– 0.2
8.6
–
0.2
0.7
+0.3 –0.2
13.5
–
0.5
3.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–250
–200
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –12V, I
B
= 0
I
C
= –100m A, I
B
= 0
I
E
= –1m A, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–200
–5
60
50
typ
80
5
max
–2
220
–1.5
10
Unit
m A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank Q R
h
FE
60 ~ 150 100 ~ 220