1
Transistor
2SC1509
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA777
n
Features
l High collector to emitter voltage V
CEO
.
l Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9– 0.2
2.54– 0.15
0.7– 0.1
4.9– 0.2
8.6
–
0.2
0.7
+0.3 –0.2
13.5
–
0.5
3.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
80
80
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10m A, I
E
= 0
I
C
= 100m A, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
130
50
typ
100
0.2
0.85
120
11
max
0.1
330
0.4
1.2
20
Unit
m A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank R S
h
FE1
130 ~ 220 185 ~ 330
*2
Pulse measurement