2SA812
器件描述：AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
器件厂商：NEC [NEC]
文件大小：241.88KB，共4页
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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan c
The mark shows major revised points.
1984
FEATURES
• Complementary to 2SC1623
• High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) )
• High Voltage: VCEO = −50 V
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO −60 V
Collector to Emitter Voltage VCEO −50 V
Emitter to Base Voltage VEBO −5.0 V
Collector Current (DC) IC −100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg −55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO −0.1 µA VCB = −60 V, IE = 0 A
Emitter Cutoff Current IEBO −0.1 µA VEB = −5.0 V, IC = 0 A
DC Current Gain hFE 90 200 600 VCE = −6.0 V, IC = −1.0 mA
Note
Collector Saturation Voltage VCE(sat) −0.18 −0.3 V IC = −100 mA, IB = −10 mA
Base to Emitter Voltage VBE −0.58 −0.62 −0.68 V VCE = 6.0 V, IC = −1.0 mA
Gain Bandwidth Product fT 180 MHz VCE = −6.0 V, IE = 10 mA
Output Capacitance Cob 4.5 pF VCE = −10 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking M4 M5 M6 M7
hFE 90 to 180 135 to 270 200 to 400 300 to 600
PACKAGE DRAWING
(Unit: mm)
2.8 ±0.2
1.5 TYP.
0.65
+0.1
–0.15
0.4
+0.1 –0.05
0.95
TYP.
0.95
TYP.
2.9 ±0.2
0.4
+0.1 –0.05
0.3
TYP.
1.1 to 1.4
Marking
0.16
+0.1 –0.06
.
1
1. Emitter
2. Base
3. Collector
1
2
3
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan c
The mark shows major revised points.
1984
FEATURES
• Complementary to 2SC1623
• High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) )
• High Voltage: VCEO = −50 V
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO −60 V
Collector to Emitter Voltage VCEO −50 V
Emitter to Base Voltage VEBO −5.0 V
Collector Current (DC) IC −100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg −55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO −0.1 µA VCB = −60 V, IE = 0 A
Emitter Cutoff Current IEBO −0.1 µA VEB = −5.0 V, IC = 0 A
DC Current Gain hFE 90 200 600 VCE = −6.0 V, IC = −1.0 mA
Note
Collector Saturation Voltage VCE(sat) −0.18 −0.3 V IC = −100 mA, IB = −10 mA
Base to Emitter Voltage VBE −0.58 −0.62 −0.68 V VCE = 6.0 V, IC = −1.0 mA
Gain Bandwidth Product fT 180 MHz VCE = −6.0 V, IE = 10 mA
Output Capacitance Cob 4.5 pF VCE = −10 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking M4 M5 M6 M7
hFE 90 to 180 135 to 270 200 to 400 300 to 600
PACKAGE DRAWING
(Unit: mm)
2.8 ±0.2
1.5 TYP.
0.65
+0.1
–0.15
0.4
+0.1 –0.05
0.95
TYP.
0.95
TYP.
2.9 ±0.2
0.4
+0.1 –0.05
0.3
TYP.
1.1 to 1.4
Marking
0.16
+0.1 –0.06
.
1
1. Emitter
2. Base
3. Collector
1
2
3