Transistors
1
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Collector to
2SC1317 V
CBO
I
C
= 10 µA, I
E
= 030V
base voltage
2SC1318 60
Collector to
2SC1317 V
CEO
I
C
= 10 mA, I
B
= 025
emitter voltage
2SC1318 50
Emitter to base voltage V
EBO
I
E
= 10 µA, I
C
= 07V
Forward current transfer ratio
*1
h
FE1

*2
V
CE
= 10 V, I
C
= 150 mA 85 340
h
FE2
V
CE
= 10 V, I
C
= 500 mA 40
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.35 0.6 V
Base to emitter saturation voltage
*1
V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA 1.1 1.5 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 6 15 pF
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
a73 Features
• Low collector to emitter saturation voltage V
CE(sat)
• Complementary pair with 2SA719 and 2SA720
a73 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector to
2SC1317 V
CBO
30 V
base voltage
2SC1318 60
Collector to
2SC1317 V
CEO
25 V
emitter voltage
2SC1318 50
Emitter to base voltage V
EBO
7V
Peak collector current I
CP
1A
Collector current I
C
500 mA
Collector power dissipation P
C
625 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
1: Emitter
2: Collector
3: Base
TO-92 Package
Unit: mm
5.0±0.2
0.7±0.1
(1.27)
13
2
2.54±0.15
(1.27)
2.3
±
0.2
0.45
+0.15
–0.1
0.45
+0.15
–0.1
0.7
±
0.2
5.1
±
0.2
13.5
±
0.5
4.0±0.2