2SA2068
器件描述：SMALL-SIGNAL TRANSISTOR
器件厂商：ISAHAYA [Isahaya Electronics Corporation]
文件大小：46.55KB，共2页
Sponsor by e络盟器件资料摘要：
DESCRIPTION
2SA2068 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package ,a high-density
mounting are possible.
Complementary with 2SA1235A.
FEATURE
● Super-thin flat lead type package. t=0.45mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
※ It shows hFE classification in below table.
〈 SMALL-SIGNAL TRANSISTOR 〉
PRELIMINARY 2SA2068
Notics :This is not a final specification. FOR LOW FREQUENCY AMPLIFY APPLICATION
Some parametric limits are subject to change. SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING Unit：ｍｍ
MAXIMUM RATINGS （ Ta=25 ℃）
Symbol Parameter Ratings Unit
VCBO Collector to Base voltage -50 V
VCEO Collector to Emitter voltage -6 V
VEBO Emitter to Base voltage -50 V
I O Collector current -200 mA
Pc Collector dissipation 100 mW
Tj Junction temperature ＋ 125 ℃
Tstg Storage temperature -55～＋ 125 ℃
ELECTRICAL CHARACTERISTICS （ Ta=25 ℃）
Limits
Min Typ Max
Collector to Emitter Breakdown voltage V(BR)CEO IC=-100μ A, R BE=∞ -50 ― ― V
Collector cut off current ICBO V CB =-50V, I E=0mA - - -0.1 μ A
Emitter cut off current IEBO V EB=-6V, I C=0mA - - -0.1 μ A
DC forward current gain hFE V CE=-6V, I C=-1mA 150 ※ 800 -
DC forward current gain hFE V CE=-6V, I C=-0.1mA 90 - - -
C to E saturation voltage VCE(sat) IC=-100mA, I B=-10mA - - - 0.3 v
Gain bandwidth product fT V CE=-6V, I E=10mA - 200 - MHz
Collector output capacitance Cob V CB =-6V, I E=0mA,f=1MHz - 4.0 - pF
Noise figure NF V CE=-6V, I E=0.3mA,f=100Hz,RG=10k Ω - - 20 dB
JEITA ：
TERMINAL CONNECTER
① ： BASE
② ： EMITTER
③ ： COLLECTOR
0.45
0.25
0.20.80.2
0.4
0.4
0.81.2
①
② ③
ISAHAYA ELECTRONICS CORPORATION
Item E F G
hFE 150～300 250～500 400～800
Abbrivation ME MF MG
2SA2068 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package ,a high-density
mounting are possible.
Complementary with 2SA1235A.
FEATURE
● Super-thin flat lead type package. t=0.45mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
※ It shows hFE classification in below table.
〈 SMALL-SIGNAL TRANSISTOR 〉
PRELIMINARY 2SA2068
Notics :This is not a final specification. FOR LOW FREQUENCY AMPLIFY APPLICATION
Some parametric limits are subject to change. SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING Unit：ｍｍ
MAXIMUM RATINGS （ Ta=25 ℃）
Symbol Parameter Ratings Unit
VCBO Collector to Base voltage -50 V
VCEO Collector to Emitter voltage -6 V
VEBO Emitter to Base voltage -50 V
I O Collector current -200 mA
Pc Collector dissipation 100 mW
Tj Junction temperature ＋ 125 ℃
Tstg Storage temperature -55～＋ 125 ℃
ELECTRICAL CHARACTERISTICS （ Ta=25 ℃）
Limits
Min Typ Max
Collector to Emitter Breakdown voltage V(BR)CEO IC=-100μ A, R BE=∞ -50 ― ― V
Collector cut off current ICBO V CB =-50V, I E=0mA - - -0.1 μ A
Emitter cut off current IEBO V EB=-6V, I C=0mA - - -0.1 μ A
DC forward current gain hFE V CE=-6V, I C=-1mA 150 ※ 800 -
DC forward current gain hFE V CE=-6V, I C=-0.1mA 90 - - -
C to E saturation voltage VCE(sat) IC=-100mA, I B=-10mA - - - 0.3 v
Gain bandwidth product fT V CE=-6V, I E=10mA - 200 - MHz
Collector output capacitance Cob V CB =-6V, I E=0mA,f=1MHz - 4.0 - pF
Noise figure NF V CE=-6V, I E=0.3mA,f=100Hz,RG=10k Ω - - 20 dB
JEITA ：
TERMINAL CONNECTER
① ： BASE
② ： EMITTER
③ ： COLLECTOR
0.45
0.25
0.20.80.2
0.4
0.4
0.81.2
①
② ③
ISAHAYA ELECTRONICS CORPORATION
Item E F G
hFE 150～300 250～500 400～800
Abbrivation ME MF MG