2SA2061
2001-10-29 1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061

High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications


• High DC current gain: h
FE
= 200 to 500 (I
C
= 0.5 A)
• Low collector-emitter saturation voltage: V
CE (sat)
= −0.19 V (max)
• High-speed switching: t
f
= 40 ns (typ.)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−20 V
Collector-emitter voltage V
CEO
−20 V
Emitter-base voltage V
EBO
−7 V
DC I
C
−2.5
Collector current
Pulse I
CP
−4.0
A
Base current I
B
−250 mA
t = 10 s 1000
Collector power
dissipation
DC
P
C

(Note) 625
mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)


Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= −20 V, I
E
= 0 ― ― −100 nA
Emitter cut-off current I
EBO
V
EB
= −7 V, I
C
= 0 ― ― −100 nA
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= −10 mA, I
B
= 0 −20 ― ― V
h
FE
(1)

V
CE
= −2 V, I
C
= 0.5 A 200 ― 500
DC current gain
h
FE
(2)

V
CE
= −2 V, I
C
= −1.6 A 100 ― ―

Collector-emitter saturation voltage V
CE (sat)
I
C
= −1.6 A, I
B
= −53 mA ― ― −0.19 V
Base-emitter saturation voltage V
BE (sat)
I
C
= −1.6 A, I
B
= −53 mA ― ― −1.10 V
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz ― 28 ― pF
Rise time t
r
― 70 ―
Storage time t
stg
― 150 ― Switching time
Fall time t
f

See Figure 1 circuit diagram.
V
CC
≈ −12 V, R
L
= 7.5 Ω
−I
B1
= I
B2
= −53 mA
― 40 ―
ns


Unit: mmç



JEDEC ―
JEITA ―
TOSHIBA 2-3S1A
Weight: 0.01 g (typ.)