Transistors
1
2SA2021
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5609
a73 Features
• High foward current transfer ratio h
FE
• SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
a73 Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−60 V
Collector to emitter voltage V
CEO
−50 V
Emitter to base voltage V
EBO
−7V
Peak collector current I
CP
−200 mA
Collector current I
C
−100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector to emitter voltage V
CEO
I
C
= −100 µA, I
B
= 0 −50 V
Emitter to base voltage V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Forward current transfer ratio h
FE
V
CE
= −10 V, I
C
= −2 mA 180 390
Collector to emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA − 0.3 − 0.5 V
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 2.7 pF
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 3E
1: Base
2: Emitter
3: Collector
SSS Mini Type Package (3-pin)
1.20
±0.05
0.52
±0.03
0 to 0.01
5˚
0.15 min.
0.80
±0.05
0.15 min.
0.33
(0.40)(0.40)
12
3
5˚
0.80±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02