2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.A 1/2
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K


The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.


zApplications
For switching, for muting.


zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ≤ 250mA
At IC = 200mA / IB = 10mA









zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
PC
Tstg
Limits
15
12
150
−55 to +150
Unit
V
V
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Collector power dissipation
Storage temperature
IC
ICP
500
1
∗
mA
A
Collector current
Tj 150Junction temperature
SMT3 300
VMT3
EMT3
∗Single pulse, Pw=1ms



zExternal dimensions (Unit : mm)
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
Each lead has same dimensions
Abbreviated symbol : BW
2SA2018
0.8
0.15
0.3Min.
1.1
(
2
)
(
1
)
2.8
1.6
0.4
(
3
)
2.91.9
0.95
0.95
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
Abbreviated symbol : BW
2SA2119K
(3)0.32
0.81.2
0.13
0.5
0.22
0.4
0.4
1.2
0.80.2 0.2
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol : BW
2SA2030

zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Symbol Min. Typ. Max. Unit Conditions
BVCBO 15 −−VIC=10µA
IC=1mA
IE=10µA
VCB=15V
IC=200mA / IB=10mA
VCE=2V / IC=10mA
VCE=2V, IE=10mA, fT=100MHz
VCB=10V, IE=0A, f=1MHz
Collector-emitter breakdown voltage BVCEO 12 −−V
Emitter-base breakdown voltage BVEBO 6 −−V
Collector cutoff current ICBO −−100 nA
Collector-emitter saturation voltage VCE (sat) − 100 250 mV
DC current transfer ratio hFE 270 − 680 −
Transition frequency fT − 260 − MHz
Output capacitance Cob − 6.5 − pF