Transistors
1
2SA2028
Silicon PNP epitaxial planer type
For DC-DC converter
a73 Features
• Large current capacitance
• Low collector to emitter saturation voltage
• High-speed switching
• Small type package, allowing downsizing and thinning of the
equipment.
a73 Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−20 V
Collector to emitter voltage V
CEO
−20 V
Emitter to base voltage V
EBO
−5V
Peak collector current I
CP
−3A
Collector current I
C
−1A
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −20 V
Collector to emitter voltage V
CEO
I
C
= −1 mA, I
B
= 0 −20 V
Emitter to base voltage V
EBO
I
E
= −10 µA, , I
C
= 0 −5V
Forward current transfer ratio
*
h
FE
V
CE
= −2 V, I
C
= −100 mA 160 560
Collector to emitter saturation voltage V
CE(sat)
I
C
= −200 mA, I
B
= −10 mA −40 −100 mV
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 20 30 pF
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA 170 MHz
f=200 MHz
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: AT
2.1
±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
°
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S Mini Type Package (3-pin)