1
Transistor
2SA1982
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC5346
n
Features
l Satisfactory foward current transfer ratio h
FE
collector current I
C
characteristics.
l High collector to emitter voltage V
CEO
.
l Small collector output capacitance C
ob
.
l Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
–150
–150
–5
–100
–50
1
150
–55~+150
Unit
V
V
V
mA
mA
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Noise voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
NV
f
T
C
ob
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –0.1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30mA, I
B
= –3mA
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–150
–5
130
typ
150
200
max
–1
330
–1
300
5
Unit
m A
V
V
V
mV
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5– 0.1
4.5
–
0.1
14.5
–
0.5
2.5– 0.5 2.5– 0.5
2.5
–
0.1
6.9– 0.1
1.05
– 0.05 (1.45)
4.00.7 0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
321
*1
h
FE
Rank classification
Rank R S
h
FE
130 ~ 220 185 ~ 330
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)