Transistors
1
2SA2010
Silicon PNP epitaxial planer type
For DC-DC converter
For various driver circuits
a73 Features
• Low collector to emitter saturation voltage V
CE(sat)
, large current
capacitance
• High-speed switching
• Mini type 3-pin package, allowing downsizing and thinning of the
equipment.
• Complementary pair with 2SC5592
a73 Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −10 V, I
E
= 0 − 0.1 µA
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −15 V
Collector to emitter voltage V
CEO
I
C
= −1 mA, I
B
= 0 −15 V
Emitter to base voltage V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Forward current transfer ratio
*
1
h
FE1
V
CE
= −2 V, I
C
= −100 mA 200 560
h
FE2
V
CE
= −2 V, I
C
= −2.5 A 100
Collector to emitter saturation voltage
*
1
V
CE(sat)
I
C
= −1 A, I
B
= −10 mA −140 mV
I
C
= −2.5 A, I
B
= −50 mA −270 −320 mV
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 40 pF
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA 180 MHz
f = 200 MHz
Turn-on time
*
2
t
on
35 ns
Storage time
*
2
t
stg
110 ns
Turn-off time
*
2
t
off
10 ns
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: AS
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5
°
10°
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Note)
*
: Measure on the ceramic substrate at 15 × 15 × 0.6 mm
3
.
Note)
*
1: Rank classification
*
2: Reference to the measurement circuit.
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini Type Package (3-pin)
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−15 V
Collector to emitter voltage V
CEO
−15 V
Emitter to base voltage V
EBO
−5V
Peak collector current I
CP
−10 A
Collector current I
C
−2.5 A
Collector power dissipation
*
P
C
600 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C