DATA SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
1996©
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
FEATURES PACKAGE DIMENSIONS
•
High fT (in milimeters)
fT = 5.5 GHz TYP.
•
| S21e |
2
= 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA
•
High speed switching characteristics
•
Equivalent NPN transistor is the 2SC2351.
•
Alternative of the 2SA1424.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Parameter Symbol Rating Unit
Collector to Base Voltage VCB0 −20 V
Collector to Emitter Voltage VCE0 −12 V
Emitter to Base Voltage VEB0 −3.0 V
Collector Current IC −50 mA
Total Power Dissipation PT 200 mW
Junction Temperature Ti 150 °C
Storage Temperature Tstg −65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cutoff Current ICB0 VCB = −10 V −0.1 µA
Emitter Cutoff Current IEB0 VEB = −2 V −0.1 µA
DC Current Gain hFE VCE = −10 V, IC = −15 mA 20 40 100
Gain Bandwidth Product fT VCE = −10 V, IC = −15 mA 4.0 5.5 GHz
Collector Capacitance Cre* VCB = −10 V, IE = 0, f = 1 MHz 0.5 1 pF
Insertion Power Gain | S21e |
2
VCE = −10 V, IC = −15 mA, f = 1.0 GHz 8.0 10.0 dB
Noise Figure NF VCE = −10 V, IC = −3.0 mA, f = 1 GHz 2.0 3 dB
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank FB
Marking T93
hFE 20 to 100
2.8
+
0.2
_
1.5 0.65
+0.1
–0.15
2
1
3
2.9
+
0.2
_
0.95
0.95
0.4
+0.1 –0.05
0.4
+0.1 –0.05
Marking
0.16
+0.1 –0.06
0.3
1.1 to 1.4
0 to 0.1
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking: T93