2SA1952
Transistors
High-speed Switching Transistor (−60V, −5A)
2SA1952
zFeatures
1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A)
2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−100
−60
−5
−5
150
−55~+150
Unit
V
V
V
A
−10
1
10
A(Pulse)
W
W(Tc=25°C)
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
zPackaging specifications and hFE
Type 2SA1952
CPT3
Q
2500
TL
Package
hFE
Code
Basic ordering unit (pieces)
zExternal dimensions (Units : mm)
2SA1952
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.50.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
5.1
zElectrical characteristics (Ta = 25°C)
Min. Typ. Max. Unit Conditions
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
−5
−
−
−
120
−
−
−
−
−
−
−
−
80
130
−
−
−10
−10
−0.3
270
−
−
V
V
µA
µA
V
−
MHz
pF
IC = −50µA
BVCEO −60 − − VIC = −1mA
IE = −50µA
VCB = −100V
VEB = −5V
IC/IB=−3A/−0.15A
−−−0.5 VIC/IB=−4A/−0.2A
VBE(sat)
−−−1.5 VIC/IB=−4A/−0.2A
−1.2 VIC/IB=−3A/−0.15A
hFE VCE = −2V , IC = −1A
VCE = −10V , IE = 0.5A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
ton −−0.3 µsIC = −3A , RL = 10Ω
tstg 1.5 µsIB1 = −IB2 = −0.15A
tf −−0.3 µsVCC −30V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Collector-base breakdown voltage
Parameter
BVCBO
Symbol
−100