1998©
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
FEATURES
• New package with dimensions in between those of small signal
and power signal package
High voltage
Fast switching speed
Complementary transistor with 2SC4942
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −600 V
Collector to emitter voltage VCEO −600 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −1.0 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % −2.0 A
Total power dissipation PT 7.5 cm
2
× 0.7 mm ceramic board used 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Electrode connection
1: Emitter
2: Collector
3: Base