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1998©
Document No. D15593EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1847
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mount possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High hFE and low VCE(sat):
VCE(sat) = −0.3 V MAX. @IC = −6.0 V, IB = −0.3 A
hFE ≥ 100 @VCE = −2.0 V, IC = −2.0 A
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −150 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −10 A
Collector current (pulse) IC(pulse) PW ≤ 300 µs, duty cycle ≤ 2% −20 A
Base current (DC) IB(DC) −6.0 A
Total power dissipation PT Ta = 25°C 1.8 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C