2SA1797
Transistors
Rev.A 1/2
Power Transistor (−50V, −3A)
2SA1797


zFeatures
1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA.
2) Excellent DC current gain characteristics.
4) Complements the 2SA1797 and 2SC4672.


zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−50
−6
−3
0.5
2
150
−55~+150
Unit
V
V
V
A (DC)
−6 A (Pulse)
∗1
W
°C
°C
∗1 Single pulse, Pw=10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗2
2SA1797
∗2 When mounted on a 40 40 0.7mm ceramic board.
+ +



zPackaging specifications and hFE
Type 2SA1797
MPT3
PQ
T100
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking AG
∗
∗Denotes hFE



zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
−50
−50
−6
−
−
−
−
−
−
−
−
−
−
−0.15
200
36
−
−
−
−0.1
−0.1
−0.35
−
−
V
V
V
µA
µA
V
MHz
pF
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−50V
VEB=−5V
IC/IB=−1A/−50mA
− 270 VCE/IC=−2V/−0.5A
VCE=−2V, IE=0.5A, f=100MHz
VCB=−10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
82
−
∗
∗
∗ Measured using pulse current