1
Transistor
2SA1790
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4626
n
Features
l High transition frequency f
T
.
l SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–5
–30
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
*
f
T
V
CE(sat)
V
BE
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= 1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA
f = 10.7MHz
min
70
150
typ
300
– 0.1
– 0.7
2.8
22
1.2
max
– 0.1
–100
–10
220
4.0
60
2.0
Unit
m A
m A
MHz
V
V
dB
W
pF
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 140 110 ~ 220
Marking Symbol EB EC
1.6– 0.15
1.6
–
0.1
1.0
–
0.1
0.75
–
0.15
0.45
–
0.1
0.5
0.3
0 to 0.1
0.5
0.8– 0.1 0.40.4
0.2
+0.1 –0.05
0.15
+0.1 –0.05
1
2
3
0.2– 0.1
Marking symbol : E