1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0080C0078C0080 C0083C0105C0108C0105C0099C0111C0110 C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
This PNP transistor is designed for general purpose amplifier applications. This
device is housed in the SOT–416/SC–90 package which is designed for low power
surface mount applications, where board space is at a premium.
• Reduces Board Space
• High h
FE
, 210–460 (typical)
• Low V
CE(sat)
, < 0.5 V
• Available in 8 mm, 7–inch/3000 Unit Tape and Reel
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Collector–Base Voltage V
(BR)CBO
–60 Vdc
Collector–Emitter Voltage V
(BR)CEO
–50 Vdc
Emitter–Base Voltage V
(BR)EBO
–6.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
DEVICE MARKING
2SA1774 = F9
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation
(1)
P
D
150 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
–55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic Symbol Min Typ Max Unit
Collector–Base Breakdown Voltage (I
C
= –50 µAdc, I
E
= 0) V
(BR)CBO
–60 — — Vdc
Collector–Emitter Breakdown Voltage (I
C
= –1.0 mAdc, I
B
= 0) V
(BR)CEO
–50 — — Vdc
Emitter–Base Breakdown Voltage (I
E
= –50 µAdc, I
E
= 0) V
(BR)EBO
–6.0 — — Vdc
Collector–Base Cutoff Current (V
CB
= –30 Vdc, I
E
= 0) I
CBO
— — –0.5 nA
Emitter–Base Cutoff Current (V
EB
= –5.0 Vdc, I
B
= 0) I
EBO
— — –0.5 µA
Collector–Emitter Saturation Voltage
(2)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
V
CE(sat)
— — –0.5
Vdc
DC Current Gain
(2)
(V
CE
= –6.0 Vdc, I
C
= –1.0 mAdc)
h
FE
120 — 560
—
Transition Frequency
(V
CE
= –12 Vdc, I
C
= –2.0 mAdc, f = 30 MHz)
f
T
— 140 —
MHz
Output Capacitance (V
CB
= –12 Vdc, I
E
= 0 Adc, f = 1 MHz) C
OB
— 3.5 — pF
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by 2SA1774/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0050C0083C0065C0049C0055C0055C0052
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
CASE 463–01, STYLE 1
SOT–416/SC–90
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
 Motorola, Inc. 1996
REV 1