1
Transistor
2SA1767
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473A
n
Features
l High collector to emitter voltage V
CEO
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–300
–300
–5
–100
–70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –100m A, I
B
= 0
I
E
= –1m A, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–300
–5
60
typ
50
7
max
150
– 0.6
Unit
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank Q
h
FE
60 ~ 150
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
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