1
Transistor
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
–80
–80
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10m A, I
E
= 0
I
C
= –100m A, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1 MHz
min
–80
–80
–5
130
50
typ
100
– 0.2
– 0.85
85
11
max
– 0.1
330
– 0.4
–1.2
20
Unit
m A
V
V
V
V
V
MHz
pF
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*
h
FE1
Rank classification
Rank R S
h
FE1
130 ~ 220 185 ~ 330
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
n
Features
l High collector to emitter voltage V
CEO
.
l Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
n
Absolute Maximum Ratings (Ta=25˚C)