2SA1759
Transistors
Rev.A 1/3
High-voltage Switching Transistor
(Camera strobes and Telephone, Power supply)
(−400V, −0.1A)
2SA1759


zFeatures
1) High breakdown voltage. (BVCEO = −400V)
2) Low saturation voltage,
typically VCE (sat)= −0.2V at IC / IB = −20mA / −2mA.
3) High switching speed, typically tf = 1µs at Ic =100mA.
4) Wide SOA (safe operating area).
5) Complements the 2SA4505.







zExternal dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0

zAbsolute maximum ratings (Ta=25
°
C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−400
−400
−7
−0.1
0.5
150
−55 to +150
Unit
V
V
V
A(DC)
−0.2 A(Pulse)
W
∗1
∗22
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=100ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.



zElectrical characteristics (Ta=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
−400
−400
−7
−
−
−
82
−
−
−
−
−
−
−
−0.2
−
12
13
−
−
−
−10
−10
−0.5
180
−
−
V
V
V
µA
µA
V
−
MHz
pF
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −400V
VEB= −6V
IC= −20mA, IB= −2mA
VBE(sat) −−1.5 V IC= −20mA, IB= −2mA
VCE= −10V , IC= −10mA
VCE= −10V , IE=10mA , f=5MHz
VCB= −10V , IE=0A , f=1MHz
ton − 0.7 −µsIC= −100mA RL=1.5kΩ
tstg − 1.8 −µsIB1= −IB2= −10mA
tf − 1 −µsVCC~ −150V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time