32
Silicon PNP Epitaxial Planar Transistor
Application : Chopper Regulator, Switch and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1746
–70
–50
–6
–12(Pulse–20)
–4
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
n Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SA1746
–10max
–10max
–50min
50min
–0.5max
–1.2max
25typ
400typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=–70V
VEB=–6V
IC=–25mA
VCE=–1V, IC=–5A
IC=–5A, IB=–80mA
IC=–5A, IB=–80mA
VCE=–12V, IE=1A
VCB=–10V, f=1MHz
LOW VCE (sat) 2SA1746
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
–4
–8
–12
–2
–6
–10
–2–1 –6–5–4–3
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
–12mA
–100mA
–50mA
–70mA
–30mA
IB=–10mA
Safe Operating Area (Single Pulse)
0
–1.5
–1.0
–0.5
–3 –10 –1000–100
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
–1A
–3A
–5A
IC=–10A
–10 –50–3 –100
–0.3
–1
–10
–30
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
100
µ
s
10ms
1ms
60
40
20
3.5
0
05025 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
–12
–10
–2
–4
–6
–8
0 –1.5–0.5 –1.0
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–1V)
125˚C (CaseTemp)
25˚C (CaseTemp)
–30˚C (CaseTemp)
–0.03 –0.1 –1–0.5 –10
50
100
500
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–1V)
Typ
–5 –0.03 –0.1 –1–0.5 –10
50
100
500
–5
(VCE=–1V)
Collector Current IC(A)
DC Current Gain h
FE
125˚C
25˚C
–30˚C
0.2
0.5
4
1
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
Without Heatsink
Natural Cooling
0.1 1 10
0
10
20
30
40
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
fT–IE Characteristics (Typical)
VCC
(V)
–20
RL
(Ω)
4
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
80
ton
(m s)
0.5typ
tstg
(m s)
0.6typ
tf
(m s)
0.3typ
IB1
(mA)
–80
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.