Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1742
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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© 2002
The 2SA1742 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is ideal
for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A
VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A
Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −60 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −7.0 A
Collector current (pulse) IC(pulse) PW ≤ 300 µs,
duty cycle ≤ 10%
−14 A
Base current (DC) IB(DC) −3.5 A
TC = 25°C 30 WTotal power dissipation PT
TA = 25°C 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SA1742 Isolated TO-220
(Isolated TO-220)