Document No. D16125EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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© 2002
The 2SA1741 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −1 A)
VCE(sat) ≤ 0.3 V (IC = −3 A, IB = −0.15 A)
Full-mold package that does not require an insulating board or
bushing when mounting.
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −60 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −5.0 A
Collector current (pulse) IC(pulse)* −10 A
Base current (DC) IB(DC) −2.5 A
Total power dissipation PT (Tc = 25°C) 25 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300 µs, duty cycle ≤ 50%