2SA1652
器件描述：PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
器件厂商：NEC [NEC]
文件大小：161.79KB，共6页
Sponsor by e络盟器件资料摘要：
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 2002
The 2SA1652 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
VCE(sat) ≤ −0.3 V (MAX.) @IC = −6 A
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
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ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −150 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current IC(DC) −10 A
Collector current IC(pulse) PW ≤ 300 µs, duty cycle ≤ 10% −20 A
Base current IB(DC) −6.0 A
Total power dissipation PT Tc = 25°C 25 W
Total power dissipation PT Ta = 25°C 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
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g51g85g76g81g87g72g71g3g76g81g3g45g68g83g68g81
g54g44g47g44g38g50g49g3g3g51g50g58g40g53g3g3g55g53g36g49g54g44g54g55g50g53
g21g54g36g20g25g24g21
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g39g36g55g36g3g3g54g43g40g40g55
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 2002
The 2SA1652 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
VCE(sat) ≤ −0.3 V (MAX.) @IC = −6 A
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
g40g79g72g70g87g85g82g71g72g3g38g82g81g81g72g70g87g76g82g81
g31g20g33g3g37g68g86g72
g31g21g33g3g38g82g79g79g72g70g87g82g85
g31g22g33g3g40g80g76g87g87g72g85
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −150 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current IC(DC) −10 A
Collector current IC(pulse) PW ≤ 300 µs, duty cycle ≤ 10% −20 A
Base current IB(DC) −6.0 A
Total power dissipation PT Tc = 25°C 25 W
Total power dissipation PT Ta = 25°C 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C