Document No. D15588EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1649, 2SA1649-Z
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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© 2002
The 2SA1649 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. (@IC = −3 A)
Fast switching speed:
tf = 0.3 µs MAX. (@IC = −3 A)
High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −40 V
Collector to emitter voltage VCEO −30 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −10 A
Collector current (pulse) IC(pulse)* −20 A
Base current (DC) IB(DC) −3.5 A
Total power dissipation PT (Tc = 25 °C) 15 W
Total power dissipation PT (Ta = 25 °C) 1.0**, 2.0*** W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
PACKAGE DRAWING (UNIT: mm)
g40g79g72g70g87g85g82g71g72g3g38g82g81g81g72g70g87g76g82g81
g20g17g3g37g68g86g72
g21g17g3g38g82g79g79g72g70g87g82g85
g22g17g3g40g80g76g87g87g72g85
g23g17g3g41g76g81g3g11g70g82g79g79g72g70g87g82g85g12
*: PW ≤ 300 µs, duty cycle ≤ 10%
**: Printing board mounted
***: 7.5 mm
2
× 0.7 mm ceramic board mounted