Document No. D16120EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1646, 2SA1646-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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© 2002
The 2SA1646 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
VCE(sat) = −0.3 V MAX. @IC = −6 A
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −150 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current ID(DC) −10 A
Collector current IC(pulse) PW ≤ 300 µs,
duty cycle ≤ 10%
−20 A
Base current IB(DC) −6.0 A
Total power dissipation PT Tc = 25°C 40 W
Total power dissipation PT Ta = 25°C 1.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
PACKAGE DRAWING (UNIT: mm)
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Electrode Connection
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