1
Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
n
Features
l Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
l High transition frequency f
T
l Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–180
–150
–180
–5
–1.5
–1
15
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SA1535
2SA1535A
2SA1535
2SA1535A
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –150V, I
E
= 0
I
C
= –1mA, I
B
= 0
I
C
= –100m A, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CE
= –10V, I
C
= –50mA, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–150
–180
–5
90
50
typ
160
100
– 0.5
–1.0
200
30
max
–10
220
–2.0
–2.0
50
Unit
m A
V
V
V
V
MHz
pF
2SA1535
2SA1535
2SA1535A
*
h
FE1
Rank classification
Rank Q R
h
FE1
90 to 155 130 to 220