21
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1493
–200
–200
–6
–15
–5
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
n Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1493
–100max
–100max
–200min
50min*
– 3.0max
20typ
400typ
Unit
m A
m A
V
V
MHz
pF
Conditions
VCB=–200V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–5A
IC=–10A, IB=–1A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
2SA1493
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical)
Safe Operating Area (Single Pulse)
hFE–IC Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
–1.5A
IB=–50mA
–100mA
–600mA
–1A
–400mA
–200mA
0
–3
–2
–1
0–1–2 –4–3
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=–15A
–10A
–5A
–0.02 –0.1 –1 –10–0.5 –5 –15
10
100
50
300
Collector Current IC(A)
DC Current Gain h
FE
Typ
–2 –10 –100 –300
–0.1
–1
–0.5
–10
–50
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
3ms
Without Heatsink
Natural Cooling
DC 100ms
20ms
10ms
0.02 0.1 1 10
0
10
20
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
(VCE=–4V)
Emitter Current IE(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance
θ
j-a
(˚C/W)
θ j-a–t Characteristics
fT–IE Characteristics (Typical)
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
–15
–10
–5
0–2–1
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–4V)
125˚C (CaseTemp)
25˚C (CaseTemp)
–30˚C (CaseTemp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –15
20
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
125˚C
25˚C
–30˚C
VCC
(V)
–60
RL
(Ω)
12
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
500
ton
(m s)
0.3typ
tstg
(m s)
0.9typ
tf
(m s)
0.2typ
IB1
(mA)
–500
VBB1
(V)
–10
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45±0.1 5.45±0.1
2-ø3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
* hFE Rank O(50to100), P(70to140), Y(90to180)