1
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
n
Features
l Allowing supply with the radial taping.
l High transition frequency f
T
.
l Optimum for high-density mounting.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0– 0.2
marking
2.54– 0.15
1.271.27
3.0
–
0.2
15.6
–
0.5
2.0
–
0.2
0.7
–
0.1
0.45
–
0.1
123
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–5
–60
–30
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitanse
Symbol
I
CBO
I
CEO
I
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA, f = 10.7MHz
min
70
150
typ
– 0.1
– 0.7
300
2.8
22
1.2
max
– 0.1
–100
–10
220
4.0
50
2.0
Unit
m A
m A
m A
V
V
MHz
dB
W
pF
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 140 110 ~ 220