1
Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SC3311A
n
Features
l High foward current transfer ratio h
FE
.
l Allowing supply with the radial taping.
l Optimum for high-density mounting.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0– 0.2
marking
2.54– 0.15
1.271.27
3.0
–
0.2
15.6
–
0.5
2.0
–
0.2
0.7
–
0.1
0.45
–
0.1
123
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–50
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–60
–50
–7
160
typ
80
3.5
max
–100
–1
460
– 0.3
Unit
nA
m A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank Q R S
h
FE
160 ~ 260 210 ~ 340 290 ~ 460