* hFE Rank O(50to100), Y(70to140)
16
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)
Application : Audio and General
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1295
–230
–230
–5
–17
–5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
n Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1295
–100max
–100max
–230min
50min*
–2.0max
35typ
500typ
Unit
m A
m A
V
V
MHz
pF
Conditions
VCB=–230V
VEB=–5V
IC=–25mA
VCE=–4V, IC=–5A
IC=–5A, IB=–0.5A
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
LAPT 2SA1295
(Ta=25°C)
(Ta=25°C)
VCC
(V)
–60
RL
(Ω)
12
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
500
ton
(m s)
0.35typ
tstg
(m s)
1.50typ
tf
(m s)
0.30typ
IB1
(mA)
–500
VBB1
(V)
–10
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical)
Safe Operating Area (Single Pulse)
hFE–IC Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–17
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
–3.0A
–50mA
–100mA
IB=–20mA
–2.0A
–1.5A
–1.0A
–500mA
–300mA
–200mA
0
– 3
–2
–1
0 –0.5 –1.0 –2.0–1.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=–10A
–5A
–0.02 –0.1 –1 –10–0.5 –5 –17
10
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–4V)
Typ
Without Heatsink
Natural Cooling
–3 –10 –100 –300
–0.1
–0.05
–1
–0.5
–10
–40
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
10ms
DC
0.02 0.1 1 10
0
20
40
60
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance
θ
j-a
(˚C/W)
θ j-a–t Characteristics
fT–IE Characteristics (Typical)
200
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
–10
–5
–15
–17
0 –3.2–2.4–1.6–0.8
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –17
10
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
125˚C
25˚C
–30˚C
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45±0.1 5.45±0.1
2-ø3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.