2SA1262
器件描述:Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
文件大小:23.15KB,共1页
Sponsor by e络盟
器件资料摘要:
14
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)
External Dimensions MT-25(TO220)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1262
–60
–60
–6
–4
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
n Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1262
–100max
–100max
–60min
40min
–0.6max
15typ
90typ
Unit
m A
m A
V
V
MHz
pF
Conditions
VCB=–60V
VEB=–6V
IC=–25mA
VCE=–4V, IC=–1A
IC=–2A, IB=–0.2A
VCE=–12V, IE=0.2A
VCB=–10V, f=1MHz
VCC
(V)
–20
RL
(Ω)
10
IC
(A)
–2
VBB2
(V)
5
IB2
(mA)
200
ton
(m s)
0.25typ
tstg
(m s)
0.75typ
tf
(m s)
0.25typ
IB1
(mA)
–200
2SA1262
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
θ j-a–t Characteristics
Pc–Ta Derating
Safe Operating Area (Single Pulse)
–10 –50 –100–2 –5
–1
–0.5
–0.1
–10
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
VCE(sat)–IB Characteristics (Typical)
0
–1.5
–1.0
–0.5
–0.1 –0.1–0.5 –0.5 –1
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=–3A
–2A
–1A
hFE–IC Characteristics (Typical)
1ms
10ms
100ms
DC
IC–VBE Temperature Characteristics (Typical)
0
–4
–3
–2
–1
0 –1.5–0.5 –1.0
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Temperature Characteristics (Typical)
(VCE=–4V)
–0.02 –0.1 –1 –4
20
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
125˚C
25˚C
–30˚C
–0.01 –0.1 –1 –4
20
50
100
500
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–4V)
Typ
–0.5
0
0
–2
–1
–3
–4
–2–1 –3 –4 –5 –6
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
–30mA
–40mA
–50mA
–60mA
–20mA
–10mA
IB=–5mA
–80mA
0.7
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0.005 0.01 0.05 0.50.1 1 3
0
10
20
30
60
50
40
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
fT–IE Characteristics (Typical)
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
VBB1
(V)
–10
Application : Audio and General Purpose
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2±0.2
ø3.75±0.2
3.0
±0.2
4.8±0.2
1.4
2.0±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.