1
Transistor
2SC2206
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1254
n
Features
l Optimum for RF amplification of FM/AM radios.
l High transition frequency f
T
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
C
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
NF
C
re
Z
rb
Conditions
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CB
= 10V, I
E
= –1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 5MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
min
30
20
5
70
150
typ
0.1
0.7
300
2.8
max
220
4
1.5
50
Unit
V
V
V
V
V
MHz
dB
pF
W
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 140 110 ~ 220