2SA1222
器件描述：PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
器件厂商：NEC [NEC]
文件大小：85.24KB，共4页
Sponsor by e络盟器件资料摘要：
1998©
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
Complementary transistor with 2SC2958 and 2SC2959
VCEO = 140 V: 2SA1221/2SC2958
VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −160 V
Collector to emitter voltage VCEO −140/–160 V
Emitter to base voltage VEBO −5.0 V
Collector current (DC) IC(DC) −500 mA
Collector current (pulse) IC(pulse)* −1.0 A
Total power dissipation PT 1.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = −100 V, IE = 0 −200 nA
Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −200 nA
DC current gain hFE ** VCE = −2.0 V, IC = −100 mA 100 150 400
DC base voltage VBE ** VCE = −5.0 V, IC = −20 mA −0.6 −0.64 −0.7 V
Collector saturation voltage VCE(sat) ** IC = −1.0 A, IB = −0.2 A −0.6 −0.9 V
Base saturation voltage VBE(sat) ** IC = −1.0 A, IB = −0.2 A −1.1 −0.3 V
Output capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 24 40 pF
Gain bandwidth product fT VCE = −10 V, IE = 20 mA 30 45 MHz
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
Complementary transistor with 2SC2958 and 2SC2959
VCEO = 140 V: 2SA1221/2SC2958
VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −160 V
Collector to emitter voltage VCEO −140/–160 V
Emitter to base voltage VEBO −5.0 V
Collector current (DC) IC(DC) −500 mA
Collector current (pulse) IC(pulse)* −1.0 A
Total power dissipation PT 1.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = −100 V, IE = 0 −200 nA
Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −200 nA
DC current gain hFE ** VCE = −2.0 V, IC = −100 mA 100 150 400
DC base voltage VBE ** VCE = −5.0 V, IC = −20 mA −0.6 −0.64 −0.7 V
Collector saturation voltage VCE(sat) ** IC = −1.0 A, IB = −0.2 A −0.6 −0.9 V
Base saturation voltage VBE(sat) ** IC = −1.0 A, IB = −0.2 A −1.1 −0.3 V
Output capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 24 40 pF
Gain bandwidth product fT VCE = −10 V, IE = 20 mA 30 45 MHz
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed