1
Transistor
2SA1128
Silicon PNP epitaxial planer type
For low-frequency output amplification
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Optimum for low-voltage operation and for converter circuits.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –25V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –2V, I
C
= –0.5A
*2
V
CE
= –2V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–25
–20
–7
90
25
typ
150
15
max
–100
–1
220
– 0.4
–1.2
25
Unit
nA
m A
V
V
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank Q R
h
FE1
90 ~ 155 130 ~ 220
*2
Pulse measurement
Note) S Rank V
CEO
‡ 18V.