Power Transistors
188
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
a73 Features
• High collector to emitter voltage V
CEO
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
a73 Absolute Maximum Ratings T
C
= 25°C
1 : Emitter
2 : Collector
3 : Base
TO-126B-A1 Package
Unit: mm
a73 Electrical Characteristics T
C
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
70 V
Collector to
2SC2497 V
CEO
50 V
emitter voltage
2SC2497A 60
Emitter to base voltage V
EBO
5V
Peak collector current I
CP
3A
Collector current I
C
1.5 A
Collector power dissipation P
C
1.2
*
1
W
5
*
2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 20 V, I
E
= 0 1 µA
I
CEO
V
CE
= 10 V, I
B
= 0 100 µA
Emitter cutoff current I
EBO
V
EB
= 5 V, I
C
= 0 10 µA
Collector to base voltage V
CBO
I
C
= 1 mA, I
E
= 0 70 V
Collector to emitter
2SC2497 V
CEO
I
C
= 2 mA, I
B
= 0 50 V
voltage
2SC2497A 60
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 1 A 80 220
Collector to emitter saturation voltage V
CE(sat)
I
C
= 1.5 A, I
B
= 0.15 A 1 V
Base to emitter saturation voltage V
BE(sat)
I
C
= 1.5 A, I
B
= 0.15 A 1.5 V
Transition frequency f
T
V
CB
= 5 V, I
E
= − 0.5 A, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= 20 V, I
E
= 0, f = 1 MHz 35 pF
Rank R S
h
FE
80 to 160 120 to 220
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.13.8
±0.3
11.0
±0.5
16.0
±1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Note)
*
1: Without heat sink
*
2: With a 100 × 100 × 2 mm A1 heat sink
Note)
*
: Rank classification