1
Transistor
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
n
Features
l Low noise voltage NV.
l High foward current transfer ratio h
FE
.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–35
–55
–35
–55
–5
–100
–50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SA1034
2SA1035
2SA1034
2SA1035
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
*2
V
CE
= –1V, I
C
= –100mA
*2
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
min
–35
–55
–35
–55
–5
180
typ
– 0.7
200
max
–100
–1
700
– 0.6
–1.0
150
Unit
nA
m A
V
V
V
V
V
MHz
mV
*
h
FE1
Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
2SA1034 FR FS FT
2SA1035 HR HS HT
Marking symbol : F
(2SA1034)
H
(2SA1035)
Unit: mm
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65– 0.15 0.65– 0.15
3
1
2
0.95
0.95
1.9
–
0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4– 0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
*2
Pulse measurement
Marking
Symbol
2SA1034
2SA1035
2SA1034
2SA1035