Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
© 2002
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confirm that this is the latest version.
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availability and additional information.
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −7.0 A
Collector current (pulse) IC(pulse)* −15 A
Base current (DC) IB(DC) −3.5 A
Total power dissipation PT (Tc = 25 °C) 40 W
Total power dissipation PT (Ta = 25 °C) 1.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Pin Connection