2SA0886
器件描述：Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：95.42KB，共5页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: February 2003 SJD00003BED
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1847
■ Features
• Output of 4 W can be obtained by a complementary pair with
2SC1847
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −1 mA, I
E
= 0 −50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −40 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 −1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −10 µA
Forward current transfer ratio
*
h
FE
V
CE
= −5 V, I
C
= −1 A 80 220
Collector-emitter saturation voltage V
CE(sat)
I
C
= −1.5 A, I
B
= − 0.15 A −1.0 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −2 A, I
B
= − 0.2 A −1.5 V
Transition frequency f
T
V
CB
= −5 V, I
E
= 0.5 A, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= −20 V, I
E
= 0, f = 1 MHz 45 pF
(Common base, input open circuited)
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−50 V
Collector-emitter voltage (Base open) V
CEO
−40 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−1.5 A
Peak collector current I
CP
−3A
Collector power dissipation
P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note) The part numbers in the parenthesis show conventional part number.
Rank Q R
h
FE1
80 to 160 120 to 220
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
1
Publication date: February 2003 SJD00003BED
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1847
■ Features
• Output of 4 W can be obtained by a complementary pair with
2SC1847
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −1 mA, I
E
= 0 −50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −40 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 −1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −10 µA
Forward current transfer ratio
*
h
FE
V
CE
= −5 V, I
C
= −1 A 80 220
Collector-emitter saturation voltage V
CE(sat)
I
C
= −1.5 A, I
B
= − 0.15 A −1.0 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −2 A, I
B
= − 0.2 A −1.5 V
Transition frequency f
T
V
CB
= −5 V, I
E
= 0.5 A, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= −20 V, I
E
= 0, f = 1 MHz 45 pF
(Common base, input open circuited)
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−50 V
Collector-emitter voltage (Base open) V
CEO
−40 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−1.5 A
Peak collector current I
CP
−3A
Collector power dissipation
P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note) The part numbers in the parenthesis show conventional part number.
Rank Q R
h
FE1
80 to 160 120 to 220
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1