2N7224
器件描述:N-CHANNEL POWER MOSFET
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器件资料摘要:
2N7224
IRFM150
LAB
SEME
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
2/99
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current (V
GS
= 10V , T
case
= 25°C)
I
D
Continuous Drain Current (V
GS
= 10V , T
case
= 100°C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
R
c113JC
Thermal Resistance Junction to Case
R
c113JCS
Thermal Resistance Case to Sink (Typical)
R
c113JCA
Thermal Resistance Junction-to-Ambient
±20V
34A
21A
136A
150W
1.2W/°C
150mJ
5.5V/ns
–55 to 150°C
0.83°C/W
0.21°C/W
48°C/W
MECHANICAL DATA
Dimensions in mm (inches)
123
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149)
Dia.
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.
35 (
1
.
195)
31.
40 (
1
.
235)
16.
89 (
0
.
665)
17.
40 (
0
.
685)
13.
59 (
0
.
5
35)
13.
84 (
0
.
5
45)
2
0
.
07 (0.
790)
2
0
.
32 (0.
800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
TO–254AA – Package
Notes
1) Pulse Test: Pulse Width c163 300c109s, c100c1632%
2) @ V
DD
= 25V , L c179 200c109H , R
G
= 25c87 , Peak I
L
= 34A , Starting T
J
= 25°C
3) @ I
SD
c163 34A , di/dt c163 70A/c109s , V
DD
c163 BV
DSS
, T
J
c163 150°C , SUGGESTED R
G
= 2.35c87
N–CHANNEL
POWER MOSFET
FEATURES
• REPETITIVE AVALANCHE RATING
• ISOLATED AND HERMETICALLY SEALED
• ALTERNATIVE TO TO-3 PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate
V
DSS
100V
I
D(cont)
34A
R
DS(on)
0.070c87