MSC1343.PDF 010-29-99
2N7372 - PNP
2N7373 - NPN
ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC 2N7372 2N7373 UNITS
VCBO Collector-Base Voltage - 100 100 V
VCEO Collector-Emitter Voltage - 80 80 V
VEBO Emitter-Base Voltage - 5.5 5.5 V
IC Continuous Collector Current 5 5 A
IC Peak Collector Current 10 10 A
IB Continuous Base Current 2 2 A
TSTG Storage Temperature -65 to 200 °C
TJ Operating Junction Temperature -65 to 200 °C
Lead Temperature 1/16" from cast for 10 sec. 300 °C
Unclamped Inductive Load Energy 15 mj
PT Continuous Device
Dissipation TC = 25°C 58 58 W
TC = 100°C 33 33 W
θJC Thermal Resistance Junction to Case 3 3 °C/W
Complimentary
Power Transistors
in Hermetic Isolated
TO-254AA Packages
JAN/TX/TXV/JANS
FEATURES:
• Planar Process for Reliability
• Fast Switching
• High-Frequency Power Transistors
• For Complementary Use with Each Other
• 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
• Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
• Leads can be Formed
• All Terminals Isolated from the Case
TO-254AA
APPLICATIONS:
• Power Supply
• Inverters and Converters
• General Purpose Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. These devices have
excellent unclamped and clamped reverse energy ratings with the base to
emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to
permit operating temperature to 200°C. The hermetically sealed package
insures maximum reliability and long life. The isolated low profile package
allows for easy PC board fit.