MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
POWER MOS IV
TM
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
2N7228 500 Volt 0.415Ω
JX2N7228*
JV2N7228*
*QUALIFIED TO MIL-S-19500/592 31/7/92
051-5015 Rev D
G
D
S
TO-254
A
valanche Rated
Avalanche Rate
d
Symbol
V
DSS
V
GS
I
D
I
DM
I
AR
P
D
E
AS
E
AR
T
J
,T
STG
T
L
UNIT
Volts
Amps
Watts
W/K
mJ
°C
UNIT
Volts
µA
nA
Amps
Ohms
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 250µA)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±20V, V
DS
= 0V)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 8.0A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 8.0A, T
C
= 125°C)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 12.0A)
STATIC ELECTRICAL CHARACTERISTICS
2N7228
500
±20
12
8
48
12
150
60
1.2
750
15
-55 to 150
300
Symbol
BV
DSS
V
GS
(TH)
I
DSS
I
GSS
I
D
(ON)
R
DS
(ON)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Avalanche Current
1
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 100°C
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
MIN TYP MAX
500
24
25
250
±100
12
0.415
0.900
0.515
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
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APT Website - http://www.advancedpower.com